IRGB4064DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Turn On Delay Time :

27 ns

Package / Case :

TO-220-3

Transistor Application :

POWER CONTROL

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Through Hole

Case Connection :

COLLECTOR

Reverse Recovery Time :

62 ns

Factory Lead Time :

99 Weeks

Width :

4.82mm

Turn Off Time-Nom (toff) :

131 ns

Input Type :

Standard

Max Collector Current :

20A

Transistor Element Material :

SILICON

Switching Energy :

29μJ (on), 200μJ (off)

Td (on/off) @ 25°C :

27ns/79ns

Turn-Off Delay Time :

79 ns

RoHS Status :

RoHS Compliant

Number of Elements :

1

Power Dissipation :

101W

Number of Terminations :

3

Radiation Hardening :

No

Height :

9.02mm

IGBT Type :

Trench

Number of Pins :

3

Published :

2006

Collector Emitter Breakdown Voltage :

600V

Operating Temperature :

-55°C~175°C TJ

Test Condition :

400V, 10A, 22 Ω, 15V

Collector Emitter Voltage (VCEO) :

1.91V

Weight :

6.000006g

Current - Collector Pulsed (Icm) :

40A

Gate-Emitter Thr Voltage-Max :

6.5V

Packaging :

Tube

Vce(on) (Max) @ Vge, Ic :

1.91V @ 15V, 10A

Collector Emitter Saturation Voltage :

1.6V

Turn On Time :

43 ns

Max Power Dissipation :

101W

Termination :

Through Hole

ECCN Code :

EAR99

Length :

10.66mm

Gate Charge :

21nC

Lead Free :

Lead Free

Mount :

Through Hole

Rise Time :

15ns

JEDEC-95 Code :

TO-220AB

Element Configuration :

Single

REACH SVHC :

No SVHC

Polarity/Channel Type :

N-Channel