IRGB4064DPBF
- Mfr.Part #
- IRGB4064DPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT WITH RECOVERY DIODE
- Stock
- 42,029
- In Stock :
- 42,029
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Mount :
- Through Hole
- Factory Lead Time :
- 99 Weeks
- Turn-Off Delay Time :
- 79 ns
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Published :
- 2006
- Transistor Application :
- POWER CONTROL
- Element Configuration :
- Single
- IGBT Type :
- Trench
- Test Condition :
- 400V, 10A, 22 Ω, 15V
- Reverse Recovery Time :
- 62 ns
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Current - Collector Pulsed (Icm) :
- 40A
- Collector Emitter Saturation Voltage :
- 1.6V
- JEDEC-95 Code :
- TO-220AB
- Switching Energy :
- 29μJ (on), 200μJ (off)
- Radiation Hardening :
- No
- Turn On Time :
- 43 ns
- Rise Time :
- 15ns
- Package / Case :
- TO-220-3
- RoHS Status :
- RoHS Compliant
- REACH SVHC :
- No SVHC
- Packaging :
- Tube
- Power Dissipation :
- 101W
- Collector Emitter Voltage (VCEO) :
- 1.91V
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- Number of Elements :
- 1
- Turn On Delay Time :
- 27 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge :
- 21nC
- Width :
- 4.82mm
- Collector Emitter Breakdown Voltage :
- 600V
- Polarity/Channel Type :
- N-Channel
- Length :
- 10.66mm
- Weight :
- 6.000006g
- Max Power Dissipation :
- 101W
- ECCN Code :
- EAR99
- Turn Off Time-Nom (toff) :
- 131 ns
- Height :
- 9.02mm
- Operating Temperature :
- -55°C~175°C TJ
- Td (on/off) @ 25°C :
- 27ns/79ns
- Max Collector Current :
- 20A
- Mounting Type :
- Through Hole
- Input Type :
- Standard
- Vce(on) (Max) @ Vge, Ic :
- 1.91V @ 15V, 10A
- Termination :
- Through Hole
- Datasheets
- IRGB4064DPBF

IRGB4064DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGB4064DPBF Description
IRGB4064DPBF transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IRGB4064DPBF MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.
IRGB4064DPBF Features
Gold metalization
Excellent thermal stability
Common source configuration
Thermally enhanced packaging
IRGB4064DPBF Applications
ISM applications
DC large signal applications
Power factor correction
Electronic lamp ballasts
Flat panel display
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