IRGB4061DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

Package / Case :

TO-220-3

Collector Emitter Saturation Voltage :

1.65V

Max Power Dissipation :

206W

Number of Elements :

1

Gate Charge :

35nC

Factory Lead Time :

16 Weeks

Width :

4.82mm

Test Condition :

400V, 18A, 22 Ω, 15V

Turn On Time :

65 ns

RoHS Status :

RoHS Compliant

Transistor Application :

POWER CONTROL

Lead Free :

Lead Free

Reverse Recovery Time :

100 ns

Vce(on) (Max) @ Vge, Ic :

1.95V @ 15V, 18A

JEDEC-95 Code :

TO-220AB

Weight :

6.000006g

Rise Time :

25ns

Published :

2004

Collector Emitter Breakdown Voltage :

600V

Td (on/off) @ 25°C :

40ns/105ns

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Number of Terminations :

3

Current - Collector Pulsed (Icm) :

72A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn Off Time-Nom (toff) :

160 ns

Mounting Type :

Through Hole

Case Connection :

COLLECTOR

ECCN Code :

EAR99

IGBT Type :

Trench

Transistor Element Material :

SILICON

Packaging :

Tube

Collector Emitter Voltage (VCEO) :

1.95V

REACH SVHC :

No SVHC

Gate-Emitter Voltage-Max :

20V

Turn-Off Delay Time :

105 ns

Input Type :

Standard

Radiation Hardening :

No

Mount :

Through Hole

Length :

10.66mm

Power Dissipation :

206W

Element Configuration :

Single

Turn On Delay Time :

40 ns

Max Collector Current :

36A

Gate-Emitter Thr Voltage-Max :

6.5V

Height :

9.02mm

Switching Energy :

95μJ (on), 350μJ (off)

Polarity/Channel Type :

N-Channel