IRGB4059DPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - IGBTs - Single

IGBT Type :

Trench

Package / Case :

TO-220-3

Turn On Time :

35 ns

Vce(on) (Max) @ Vge, Ic :

2.05V @ 15V, 4A

Length :

10.66mm

Height :

9.02mm

Weight :

6.000006g

Case Connection :

COLLECTOR

Gate-Emitter Voltage-Max :

20V

Turn-Off Delay Time :

65 ns

Reverse Recovery Time :

55 ns

Collector Emitter Voltage (VCEO) :

2.05V

Transistor Application :

POWER CONTROL

Additional Feature :

ULTRA FAST SOFT RECOVERY

Radiation Hardening :

No

Collector Emitter Breakdown Voltage :

2.2V

Max Collector Current :

8A

Voltage - Collector Emitter Breakdown (Max) :

600V

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Mounting Type :

Through Hole

RoHS Status :

RoHS Compliant

Switching Energy :

35μJ (on), 75μJ (off)

JEDEC-95 Code :

TO-220AB

Packaging :

Tube

Current - Collector Pulsed (Icm) :

16A

Gate Charge :

9nC

Number of Elements :

1

Transistor Element Material :

SILICON

Gate-Emitter Thr Voltage-Max :

6.5V

Turn Off Time-Nom (toff) :

120 ns

Termination :

Through Hole

ECCN Code :

EAR99

Turn On Delay Time :

25 ns

Input Type :

Standard

Lead Free :

Lead Free

Max Power Dissipation :

56W

REACH SVHC :

No SVHC

Mount :

Through Hole

Collector Emitter Saturation Voltage :

1.75V

Rise Time :

10ns

Number of Pins :

3

Test Condition :

400V, 4A, 100 Ω, 15V

Width :

4.82mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Td (on/off) @ 25°C :

25ns/65ns

Power Dissipation :

56W

Fall Time-Max (tf) :

20ns

Polarity/Channel Type :

N-Channel

Published :

2001

Number of Terminations :

3