IRGB4059DPBF
- Mfr.Part #
- IRGB4059DPBF
- Manufacturer
- International Rectifier
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- IGBT, 8A I(C), 600V V(BR)CES, N-
- Stock
- 600
- In Stock :
- 600
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- Manufacturer :
- International Rectifier
- Product Category :
- Transistors - IGBTs - Single
- Turn On Delay Time :
- 25 ns
- Case Connection :
- COLLECTOR
- Gate-Emitter Voltage-Max :
- 20V
- Gate-Emitter Thr Voltage-Max :
- 6.5V
- Height :
- 9.02mm
- Turn Off Time-Nom (toff) :
- 120 ns
- Operating Temperature :
- -55°C~175°C TJ
- Radiation Hardening :
- No
- Published :
- 2001
- Lead Free :
- Lead Free
- Vce(on) (Max) @ Vge, Ic :
- 2.05V @ 15V, 4A
- REACH SVHC :
- No SVHC
- Additional Feature :
- ULTRA FAST SOFT RECOVERY
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 1.75V
- Reverse Recovery Time :
- 55 ns
- Transistor Application :
- POWER CONTROL
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 2.05V
- Termination :
- Through Hole
- Power Dissipation :
- 56W
- Element Configuration :
- Single
- Mount :
- Through Hole
- Turn-Off Delay Time :
- 65 ns
- Rise Time :
- 10ns
- Weight :
- 6.000006g
- RoHS Status :
- RoHS Compliant
- Turn On Time :
- 35 ns
- Package / Case :
- TO-220-3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Td (on/off) @ 25°C :
- 25ns/65ns
- Width :
- 4.82mm
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Switching Energy :
- 35μJ (on), 75μJ (off)
- Current - Collector Pulsed (Icm) :
- 16A
- Input Type :
- Standard
- IGBT Type :
- Trench
- Length :
- 10.66mm
- Fall Time-Max (tf) :
- 20ns
- Gate Charge :
- 9nC
- Voltage - Collector Emitter Breakdown (Max) :
- 600V
- Max Collector Current :
- 8A
- Collector Emitter Breakdown Voltage :
- 2.2V
- Max Power Dissipation :
- 56W
- Number of Elements :
- 1
- Polarity/Channel Type :
- N-Channel
- Test Condition :
- 400V, 4A, 100 Ω, 15V
- Datasheets
- IRGB4059DPBF

IRGB4059DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at
IRGB4059DPBF Description
IRGB4059DPBF is a 600v n-channel insulated gate bipolar transistor with an ultrafast soft recovery diode. The Infineon IRGB4059DPBF provides high efficiency in various applications, rugged transient performance for increased reliability, and excellent current sharing in parallel operation. And it is suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses.
IRGB4059DPBF Features
Low VcE (on) Trench IGBT Technology
Low Switching Losses
Maximum Junction temperature 175 °C
5μs SCSOA
Square RBSOA
100% of The Parts Tested for 4X Rated Current (LM)
Positive VcE (on) Temperature Coefficient.
Ultra Fast Soft Recovery Co-Pak Diode
Tighter Distribution of Parameters
Lead-Free Package
IRGB4059DPBF Applications
Automotive
Infotainment & cluster
Industrial
Electronic point of sale (EPOS)
Personal electronics
Gaming
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