IRGB4059DPBF

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Mfr.Part #
IRGB4059DPBF
Manufacturer
International Rectifier
Package / Case
TO-220-3
Datasheet
Download
Description
IGBT, 8A I(C), 600V V(BR)CES, N-
Stock
600
In Stock :
600

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Manufacturer :
International Rectifier
Product Category :
Transistors - IGBTs - Single
Turn On Delay Time :
25 ns
Case Connection :
COLLECTOR
Gate-Emitter Voltage-Max :
20V
Gate-Emitter Thr Voltage-Max :
6.5V
Height :
9.02mm
Turn Off Time-Nom (toff) :
120 ns
Operating Temperature :
-55°C~175°C TJ
Radiation Hardening :
No
Published :
2001
Lead Free :
Lead Free
Vce(on) (Max) @ Vge, Ic :
2.05V @ 15V, 4A
REACH SVHC :
No SVHC
Additional Feature :
ULTRA FAST SOFT RECOVERY
Number of Terminations :
3
Collector Emitter Saturation Voltage :
1.75V
Reverse Recovery Time :
55 ns
Transistor Application :
POWER CONTROL
Mounting Type :
Through Hole
JEDEC-95 Code :
TO-220AB
Transistor Element Material :
SILICON
Number of Pins :
3
Collector Emitter Voltage (VCEO) :
2.05V
Termination :
Through Hole
Power Dissipation :
56W
Element Configuration :
Single
Mount :
Through Hole
Turn-Off Delay Time :
65 ns
Rise Time :
10ns
Weight :
6.000006g
RoHS Status :
RoHS Compliant
Turn On Time :
35 ns
Package / Case :
TO-220-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Td (on/off) @ 25°C :
25ns/65ns
Width :
4.82mm
ECCN Code :
EAR99
Packaging :
Tube
Switching Energy :
35μJ (on), 75μJ (off)
Current - Collector Pulsed (Icm) :
16A
Input Type :
Standard
IGBT Type :
Trench
Length :
10.66mm
Fall Time-Max (tf) :
20ns
Gate Charge :
9nC
Voltage - Collector Emitter Breakdown (Max) :
600V
Max Collector Current :
8A
Collector Emitter Breakdown Voltage :
2.2V
Max Power Dissipation :
56W
Number of Elements :
1
Polarity/Channel Type :
N-Channel
Test Condition :
400V, 4A, 100 Ω, 15V
Datasheets
IRGB4059DPBF
Introducing Transistors - IGBTs - Single International Rectifier IRGB4059DPBF from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~175°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, Package / Case:TO-220-3, IRGB4059DPBF pinout, IRGB4059DPBF datasheet PDF, IRGB4059DPBF amp .Beyond Transistors - IGBTs - Single International Rectifier IRGB4059DPBF ,we also offer IXYT25N250CHV, IXYX140N120A4, IXYH30N450HV, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier IRGB4059DPBF


IRGB4059DPBF datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available at

IRGB4059DPBF Description


IRGB4059DPBF is a 600v n-channel insulated gate bipolar transistor with an ultrafast soft recovery diode. The Infineon IRGB4059DPBF provides high efficiency in various applications, rugged transient performance for increased reliability, and excellent current sharing in parallel operation. And it is suitable for a wide range of switching frequencies due to low VCE (ON) and low switching losses. 



IRGB4059DPBF Features


Low VcE (on) Trench IGBT Technology

Low Switching Losses

Maximum Junction temperature 175 °C

5μs SCSOA

Square RBSOA

100% of The Parts Tested for 4X Rated Current (LM)

Positive VcE (on) Temperature Coefficient.

Ultra Fast Soft Recovery Co-Pak Diode

Tighter Distribution of Parameters

Lead-Free Package



IRGB4059DPBF Applications


Automotive 

Infotainment & cluster 

Industrial 

Electronic point of sale (EPOS) 

Personal electronics 

Gaming


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