IRFU5305PBF

Manufacturer :

International Rectifier

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 25V

Resistance :

65mOhm

Peak Reflow Temperature (Cel) :

260

Continuous Drain Current (ID) :

-31A

Time@Peak Reflow Temperature-Max (s) :

30

Gate to Source Voltage (Vgs) :

20V

Contact Plating :

Tin

Turn-Off Delay Time :

39 ns

Turn On Delay Time :

14 ns

RoHS Status :

ROHS3 Compliant

Lead Pitch :

2.28mm

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Mount :

Through Hole

Drain Current-Max (Abs) (ID) :

25A

Voltage - Rated DC :

-55V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

55V

Series :

HEXFET®

Width :

2.3mm

Number of Elements :

1

Operating Temperature :

-55°C~175°C TJ

FET Type :

P-Channel

Packaging :

Tube

Factory Lead Time :

12 Weeks

Case Connection :

DRAIN

Rise Time :

66ns

Height :

6.1mm

Power Dissipation-Max :

110W Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Nominal Vgs :

-4 V

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Number of Pins :

3

Threshold Voltage :

-4V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Length :

6.6mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

280 mJ

Current - Continuous Drain (Id) @ 25°C :

31A Tc

Transistor Element Material :

SILICON

Lead Length :

9.65mm

Published :

2004

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Fall Time (Typ) :

63 ns

JESD-609 Code :

e3

Radiation Hardening :

No

Power Dissipation :

89W

Current Rating :

-28A

Lead Free :

Contains Lead, Lead Free

Number of Terminations :

3

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

65m Ω @ 16A, 10V

Drain to Source Breakdown Voltage :

-55V