IRFU020PBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Additional Feature :

FAST SWITCHING

Drain to Source Voltage (Vdss) :

60V

Radiation Hardening :

No

Fall Time (Typ) :

42 ns

DS Breakdown Voltage-Min :

60V

Pulsed Drain Current-Max (IDM) :

56A

Gate to Source Voltage (Vgs) :

20V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Case Connection :

DRAIN

Gate Charge (Qg) (Max) @ Vgs :

25nC @ 10V

Continuous Drain Current (ID) :

14A

Number of Channels :

1

Power Dissipation-Max :

2.5W Ta 42W Tc

Turn On Delay Time :

13 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Turn-Off Delay Time :

25 ns

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

100m Ω @ 8.4A, 10V

Vgs (Max) :

±20V

ECCN Code :

EAR99

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

RoHS Status :

ROHS3 Compliant

Number of Terminations :

3

Transistor Element Material :

SILICON

Pin Count :

3

Number of Pins :

3

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3

Width :

2.39mm

Operating Temperature :

-55°C~150°C TJ

Length :

6.73mm

Rise Time :

58ns

Published :

2016

Mounting Type :

Through Hole

Packaging :

Tube

Height :

6.22mm

Number of Elements :

1

Weight :

329.988449mg

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn)

Time@Peak Reflow Temperature-Max (s) :

40

Input Capacitance (Ciss) (Max) @ Vds :

640pF @ 25V

FET Type :

N-Channel

Pbfree Code :

yes

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Mount :

Through Hole

Transistor Application :

SWITCHING