IRFU1018EPBF

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Mfr.Part #
IRFU1018EPBF
Manufacturer
International Rectifier
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Datasheet
Download
Description
MOSFET N-CH 60V 56A IPAK
Stock
287
In Stock :
287

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Manufacturer :
International Rectifier
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Terminations :
3
Published :
2009
Number of Elements :
1
Resistance :
8.4mOhm
FET Type :
N-Channel
Lead Free :
Lead Free
Mount :
Through Hole
Drain Current-Max (Abs) (ID) :
79A
Length :
6.7056mm
Threshold Voltage :
4V
Gate Charge (Qg) (Max) @ Vgs :
69nC @ 10V
RoHS Status :
RoHS Compliant
Transistor Application :
SWITCHING
Packaging :
Tube
Vgs(th) (Max) @ Id :
4V @ 100µA
Gate to Source Voltage (Vgs) :
20V
REACH SVHC :
No SVHC
Fall Time (Typ) :
46 ns
Height :
6.22mm
Terminal Finish :
Matte Tin (Sn) - with Nickel (Ni) barrier
Time@Peak Reflow Temperature-Max (s) :
30
ECCN Code :
EAR99
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
2290pF @ 50V
Peak Reflow Temperature (Cel) :
260
Package / Case :
TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type :
Through Hole
Rds On (Max) @ Id, Vgs :
8.4m Ω @ 47A, 10V
Power Dissipation-Max :
110W Tc
Element Configuration :
Single
Continuous Drain Current (ID) :
56A
Avalanche Energy Rating (Eas) :
88 mJ
Number of Pins :
3
Operating Mode :
ENHANCEMENT MODE
Turn On Delay Time :
13 ns
Drain to Source Breakdown Voltage :
60V
Width :
2.3876mm
Recovery Time :
39 ns
Power Dissipation :
110W
Vgs (Max) :
±20V
Turn-Off Delay Time :
55 ns
Operating Temperature :
-55°C~175°C TJ
JESD-609 Code :
e3
Radiation Hardening :
No
Case Connection :
DRAIN
Series :
HEXFET®
Current - Continuous Drain (Id) @ 25°C :
56A Tc
Transistor Element Material :
SILICON
Rise Time :
35ns
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Datasheets
IRFU1018EPBF
Introducing Transistors - FETs, MOSFETs - Single International Rectifier IRFU1018EPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Terminations:3, Package / Case:TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type:Through Hole, Number of Pins:3, Operating Temperature:-55°C~175°C TJ, IRFU1018EPBF pinout, IRFU1018EPBF datasheet PDF, IRFU1018EPBF amp .Beyond Transistors - FETs, MOSFETs - Single International Rectifier IRFU1018EPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

International Rectifier IRFU1018EPBF


N-Channel Tube 8.4m Ω @ 47A, 10V ±20V 2290pF @ 50V 69nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA

IRFU1018EPBF Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 88 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 2290pF @ 50V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 60V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 60V.There is no drain current on this device since the maximum continuous current it can conduct is 79A.As a result of its turn-off delay time, which is 55 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 13 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFU1018EPBF Features


the avalanche energy rating (Eas) is 88 mJ
a continuous drain current (ID) of 56A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 55 ns
a threshold voltage of 4V


IRFU1018EPBF Applications


There are a lot of Infineon Technologies
IRFU1018EPBF applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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