IRFU024NPBFAKLA1

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

20 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

370 pF @ 25 V

FET Type :

N-Channel

Rds On (Max) @ Id, Vgs :

75mOhm @ 10A, 10V

Mounting Type :

Through Hole

FET Feature :

-

Power Dissipation (Max) :

45W (Tc)

Series :

HEXFET®

Current - Continuous Drain (Id) @ 25°C :

17A (Tc)

Product Status :

Active

Vgs (Max) :

±20V

Technology :

MOSFET (Metal Oxide)

Drive Voltage (Max Rds On, Min Rds On) :

10V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Operating Temperature :

-55°C ~ 175°C (TJ)

Drain to Source Voltage (Vdss) :

55 V

Package :

Tube

Supplier Device Package :

IPAK (TO-251AA)

Vgs(th) (Max) @ Id :

4V @ 250µA