IRFU024PBF
- Mfr.Part #
- IRFU024PBF
- Manufacturer
- Vishay
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 14A TO251AA
- Stock
- 17,477
- In Stock :
- 17,477
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Lead Free :
- Lead Free
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- FET Type :
- N-Channel
- Length :
- 6.73mm
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 329.988449mg
- Number of Terminations :
- 3
- Power Dissipation :
- 2.5W
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 14A
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Turn-Off Delay Time :
- 25 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 640pF @ 25V
- Pin Count :
- 3
- Rds On (Max) @ Id, Vgs :
- 100m Ω @ 8.4A, 10V
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Pulsed Drain Current-Max (IDM) :
- 56A
- Vgs (Max) :
- ±20V
- Packaging :
- Tube
- Number of Elements :
- 1
- Power Dissipation-Max :
- 2.5W Ta 42W Tc
- Case Connection :
- DRAIN
- DS Breakdown Voltage-Min :
- 60V
- Mounting Type :
- Through Hole
- Threshold Voltage :
- 4V
- Gate to Source Voltage (Vgs) :
- 20V
- Operating Mode :
- ENHANCEMENT MODE
- REACH SVHC :
- Unknown
- Height :
- 6.22mm
- Transistor Application :
- SWITCHING
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Channels :
- 1
- Drain to Source Voltage (Vdss) :
- 60V
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- Resistance :
- 100MOhm
- Mount :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Width :
- 2.39mm
- Turn On Delay Time :
- 13 ns
- Rise Time :
- 58ns
- Factory Lead Time :
- 8 Weeks
- Number of Pins :
- 3
- Element Configuration :
- Single
- Fall Time (Typ) :
- 42 ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Datasheets
- IRFU024PBF
N-Channel Tube 100m Ω @ 8.4A, 10V ±20V 640pF @ 25V 25nC @ 10V 60V TO-251-3 Short Leads, IPak, TO-251AA
IRFU024PBF Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 640pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 14A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 25 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 56A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 13 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 4V threshold voltage. Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 60V in order to maintain normal operation.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFU024PBF Features
a continuous drain current (ID) of 14A
the turn-off delay time is 25 ns
based on its rated peak drain current 56A.
a threshold voltage of 4V
a 60V drain to source voltage (Vdss)
IRFU024PBF Applications
There are a lot of Vishay Siliconix
IRFU024PBF applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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