IRFU1018EPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

79A

Avalanche Energy Rating (Eas) :

88 mJ

Packaging :

Tube

ECCN Code :

EAR99

Number of Terminations :

3

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Mounting Type :

Through Hole

Vgs (Max) :

±20V

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Length :

6.7056mm

Rise Time :

35ns

Number of Pins :

3

Recovery Time :

39 ns

Vgs(th) (Max) @ Id :

4V @ 100µA

Number of Elements :

1

Threshold Voltage :

4V

Current - Continuous Drain (Id) @ 25°C :

56A Tc

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

110W

Operating Temperature :

-55°C~175°C TJ

REACH SVHC :

No SVHC

Element Configuration :

Single

Series :

HEXFET®

Fall Time (Typ) :

46 ns

Lead Free :

Lead Free

Case Connection :

DRAIN

Turn On Delay Time :

13 ns

Rds On (Max) @ Id, Vgs :

8.4m Ω @ 47A, 10V

Time@Peak Reflow Temperature-Max (s) :

30

Gate Charge (Qg) (Max) @ Vgs :

69nC @ 10V

Transistor Application :

SWITCHING

Mount :

Through Hole

Resistance :

8.4mOhm

Power Dissipation-Max :

110W Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

2290pF @ 50V

Radiation Hardening :

No

Height :

6.22mm

Width :

2.3876mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2009

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

60V

Turn-Off Delay Time :

55 ns

Continuous Drain Current (ID) :

56A