IRFU014
- Mfr.Part #
- IRFU014
- Manufacturer
- Vishay
- Package / Case
- TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 7.7A TO251AA
- Stock
- 15,946
- In Stock :
- 15,946
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- FET Type :
- N-Channel
- Supplier Device Package :
- TO-251AA
- Turn-Off Delay Time :
- 13 ns
- Input Capacitance :
- 300pF
- Current Rating :
- 7.7A
- Nominal Vgs :
- 4 V
- Element Configuration :
- Single
- Packaging :
- Tube
- Rds On Max :
- 200 mΩ
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 7.7A
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Drain to Source Resistance :
- 200mOhm
- Input Capacitance (Ciss) (Max) @ Vds :
- 300pF @ 25V
- Package / Case :
- TO-251-3 Short Leads, IPak, TO-251AA
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Voltage (Vdss) :
- 60V
- Operating Temperature :
- -55°C~150°C TJ
- Rds On (Max) @ Id, Vgs :
- 200mOhm @ 4.6A, 10V
- Lead Free :
- Contains Lead
- Fall Time (Typ) :
- 19 ns
- Min Operating Temperature :
- -55°C
- Current - Continuous Drain (Id) @ 25°C :
- 7.7A Tc
- RoHS Status :
- Non-RoHS Compliant
- Turn On Delay Time :
- 10 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 11nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 60V
- Drain to Source Breakdown Voltage :
- 60V
- REACH SVHC :
- Unknown
- Vgs (Max) :
- ±20V
- Max Operating Temperature :
- 150°C
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Power Dissipation-Max :
- 2.5W Ta 25W Tc
- Rise Time :
- 50ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Published :
- 2016
- Datasheets
- IRFU014
N-Channel Tube 200mOhm @ 4.6A, 10V ±20V 300pF @ 25V 11nC @ 10V 60V TO-251-3 Short Leads, IPak, TO-251AA
IRFU014 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 300pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 7.7A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=60V. And this device has 60V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 13 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 200mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 10 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Operating this transistor requires a 60V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
IRFU014 Features
a continuous drain current (ID) of 7.7A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 13 ns
single MOSFETs transistor is 200mOhm
a 60V drain to source voltage (Vdss)
IRFU014 Applications
There are a lot of Vishay Siliconix
IRFU014 applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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