IRFU024NPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation-Max :

45W Tc

Continuous Drain Current (ID) :

17A

Drain to Source Breakdown Voltage :

55V

Operating Mode :

ENHANCEMENT MODE

Width :

2.3876mm

Mounting Type :

Through Hole

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 10V

Peak Reflow Temperature (Cel) :

260

Case Connection :

DRAIN

Element Configuration :

Single

Transistor Element Material :

SILICON

Series :

HEXFET®

Gate to Source Voltage (Vgs) :

20V

Length :

6.7056mm

Contact Plating :

Tin

Additional Feature :

AVALANCHE RATED, ULTRA LOW RESISTANCE

Rise Time :

34ns

JESD-609 Code :

e3

ECCN Code :

EAR99

Factory Lead Time :

12 Weeks

Number of Elements :

1

Turn-Off Delay Time :

19 ns

Mount :

Through Hole

Vgs(th) (Max) @ Id :

4V @ 250µA

REACH SVHC :

No SVHC

Threshold Voltage :

4V

Input Capacitance (Ciss) (Max) @ Vds :

370pF @ 25V

Rds On (Max) @ Id, Vgs :

75m Ω @ 10A, 10V

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Pulsed Drain Current-Max (IDM) :

68A

Current Rating :

17A

Height :

6.22mm

Dual Supply Voltage :

55V

Power Dissipation :

38W

Published :

1998

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Contains Lead, Lead Free

Package / Case :

TO-251-3 Short Leads, IPak, TO-251AA

Voltage - Rated DC :

55V

Fall Time (Typ) :

27 ns

Turn On Delay Time :

4.9 ns

Termination :

Through Hole

Resistance :

75mOhm

Number of Terminations :

3

Number of Pins :

3

Time@Peak Reflow Temperature-Max (s) :

30

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tube

Nominal Vgs :

4 V

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant