IRF7506TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Input Capacitance (Ciss) (Max) @ Vds :

180pF @ 25V

Power - Max :

1.25W

FET Type :

2 P-Channel (Dual)

Package / Case :

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Current - Continuous Drain (Id) @ 25°C :

1.7A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JESD-609 Code :

e3

Surface Mount :

yes

ECCN Code :

EAR99

Configuration :

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Published :

1997

Terminal Finish :

Matte Tin (Sn)

Packaging :

Cut Tape (CT)

Drain to Source Voltage (Vdss) :

30V

Drain Current-Max (Abs) (ID) :

1.7A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Vgs(th) (Max) @ Id :

1V @ 250μA

Base Part Number :

IRF7506

Gate Charge (Qg) (Max) @ Vgs :

11nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

Pulsed Drain Current-Max (IDM) :

9.6A

RoHS Status :

Non-RoHS Compliant

Series :

HEXFET®

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

270m Ω @ 1.2A, 10V

JESD-30 Code :

R-PDSO-G8

Number of Elements :

2

Drain-source On Resistance-Max :

0.27Ohm

DS Breakdown Voltage-Min :

30V

Qualification Status :

Not Qualified

Number of Terminations :

8

Additional Feature :

LOGIC LEVEL COMPATIBLE

Operating Mode :

ENHANCEMENT MODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)