IRF7307TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Breakdown Voltage :

20V

Base Part Number :

IRF7307PBF

Nominal Vgs :

700 mV

Threshold Voltage :

700mV

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Gate to Source Voltage (Vgs) :

12V

Continuous Drain Current (ID) :

5.2A

Additional Feature :

ULTRA LOW RESISTANCE

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

Width :

3.9878mm

FET Type :

N and P-Channel

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

700mV @ 250μA

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Published :

1997

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Number of Pins :

8

Mount :

Surface Mount

Fall Time (Typ) :

33 ns

Factory Lead Time :

12 Weeks

Radiation Hardening :

No

Resistance :

50mOhm

Power Dissipation :

2W

ECCN Code :

EAR99

Turn-Off Delay Time :

51 ns

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Rise Time :

26ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Current Rating :

5.2A

Length :

4.9784mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Mounting Type :

Surface Mount

Terminal Finish :

Matte Tin (Sn)

FET Feature :

Logic Level Gate

REACH SVHC :

No SVHC

Number of Terminations :

8

Input Capacitance (Ciss) (Max) @ Vds :

660pF @ 15V

Height :

1.4986mm

Terminal Form :

Gull wing

Number of Elements :

2

Max Power Dissipation :

2W

Current - Continuous Drain (Id) @ 25°C :

5.2A 4.3A

Rds On (Max) @ Id, Vgs :

50m Ω @ 2.6A, 4.5V

Series :

HEXFET®

Terminal Position :

Dual