IRF6156

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package / Case :

6-FlipFet™

Configuration :

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

ECCN Code :

EAR99

DS Breakdown Voltage-Min :

20V

Power - Max :

2.5W

Packaging :

Bulk

FET Type :

2 N-Channel (Dual)

Transistor Application :

SWITCHING

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

6

Surface Mount :

yes

Terminal Form :

Ball

RoHS Status :

Non-RoHS Compliant

Terminal Position :

BOTTOM

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 5V

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

Published :

2006

Time@Peak Reflow Temperature-Max (s) :

40

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Drain-source On Resistance-Max :

0.04Ohm

Input Capacitance (Ciss) (Max) @ Vds :

950pF @ 15V

Rds On (Max) @ Id, Vgs :

40m Ω @ 6.5A, 4.5V

JESD-30 Code :

R-PBGA-B6

Power Dissipation-Max (Abs) :

2.5W

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

6.5A

Qualification Status :

Not Qualified

Operating Mode :

ENHANCEMENT MODE