IRF5806TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

11.4nC @ 4.5V

Height :

1mm

Fall Time (Typ) :

126 ns

Width :

1.7mm

Threshold Voltage :

-1.2V

JESD-609 Code :

e3

Series :

HEXFET®

Packaging :

Tape and Reel (TR)

Turn-Off Delay Time :

94 ns

Rds On (Max) @ Id, Vgs :

86m Ω @ 4A, 4.5V

Power Dissipation-Max :

2W Ta

Terminal Finish :

Matte Tin (Sn)

Rise Time :

27ns

Turn On Delay Time :

6.2 ns

Mount :

Surface Mount

Radiation Hardening :

No

Power Dissipation :

2W

Published :

2005

Dual Supply Voltage :

-20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Termination :

SMD/SMT

Drain Current-Max (Abs) (ID) :

4A

Number of Pins :

6

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

594pF @ 15V

REACH SVHC :

No SVHC

Continuous Drain Current (ID) :

-4A

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Vgs (Max) :

±20V

FET Type :

P-Channel

Number of Elements :

1

Length :

3.1mm

Factory Lead Time :

18 Weeks

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Resistance :

86mOhm

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Lead Free :

Lead Free

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Gate to Source Voltage (Vgs) :

20V

Drain to Source Breakdown Voltage :

-20V

Nominal Vgs :

-1.2 V