IRF5806

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

ECCN Code :

EAR99

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

11.4nC @ 4.5V

Power Dissipation-Max :

2W Ta

Current - Continuous Drain (Id) @ 25°C :

4A Ta

RoHS Status :

Non-RoHS Compliant

Drain to Source Voltage (Vdss) :

20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Configuration :

Single

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

86m Ω @ 4A, 4.5V

Terminal Finish :

Matte Tin (Sn)

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

4A

Package / Case :

SOT-23-6 Thin, TSOT-23-6

FET Type :

P-Channel

Operating Temperature :

-55°C~150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

594pF @ 15V

Packaging :

Tube

Drive Voltage (Max Rds On,Min Rds On) :

2.5V 4.5V

Published :

2003

Vgs(th) (Max) @ Id :

1.2V @ 250µA

Series :

HEXFET®