IRF5805TRPBF
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- Mfr.Part #
- IRF5805TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 3.8A MICRO6
- Stock
- 5,174
- In Stock ：
- 5,174
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 98m Ω @ 3.8A, 10V
- REACH SVHC :
- No SVHC
- Radiation Hardening :
- No
- Turn On Delay Time :
- 11 ns
- Element Configuration :
- Single
- Packaging :
- Tape and Reel (TR)
- Vgs(th) (Max) @ Id :
- 2.5V @ 250μA
- Nominal Vgs :
- -2.5 V
- Power Dissipation :
- 2W
- Operating Mode :
- ENHANCEMENT MODE
- Drain to Source Voltage (Vdss) :
- 30V
- Height :
- 990.6μm
- Current - Continuous Drain (Id) @ 25°C :
- 3.8A Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Turn-Off Delay Time :
- 90 ns
- Number of Elements :
- 1
- FET Type :
- P-Channel
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Continuous Drain Current (ID) :
- -3.8A
- Threshold Voltage :
- -2.5V
- Width :
- 1.7018mm
- Published :
- 2005
- Termination :
- SMD/SMT
- Power Dissipation-Max :
- 2W Ta
- Terminal Finish :
- Matte Tin (Sn)
- RoHS Status :
- ROHS3 Compliant
- Gate to Source Voltage (Vgs) :
- 20V
- Rise Time :
- 14ns
- JESD-609 Code :
- e3
- Factory Lead Time :
- 19 Weeks
- Series :
- HEXFET®
- Number of Pins :
- 6
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Length :
- 3mm
- Dual Supply Voltage :
- -30V
- Mount :
- Surface Mount
- Vgs (Max) :
- ±20V
- Drain to Source Breakdown Voltage :
- -30V
- Fall Time (Typ) :
- 49 ns
- Input Capacitance (Ciss) (Max) @ Vds :
- 511pF @ 25V
- Operating Temperature :
- -55°C~150°C TJ
- Mounting Type :
- Surface Mount
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Datasheets
- IRF5805TRPBF
P-Channel Tape & Reel (TR) 98m Ω @ 3.8A, 10V ±20V 511pF @ 25V 17nC @ 10V 30V SOT-23-6 Thin, TSOT-23-6
IRF5805TRPBF Overview
A device's maximal input capacitance is 511pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is -3.8A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -30V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 90 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 11 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -2.5V threshold voltage.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
IRF5805TRPBF Features
a continuous drain current (ID) of -3.8A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 90 ns
a threshold voltage of -2.5V
a 30V drain to source voltage (Vdss)
IRF5805TRPBF Applications
There are a lot of Infineon Technologies
IRF5805TRPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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