IRF5805

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

2.5V @ 250μA

Drain Current-Max (Abs) (ID) :

3.8A

Terminal Position :

Dual

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

15A

Surface Mount :

yes

Terminal Form :

Gull wing

DS Breakdown Voltage-Min :

30V

Qualification Status :

Not Qualified

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

98m Ω @ 3.8A, 10V

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Surface Mount

Package / Case :

SOT-23-6 Thin, TSOT-23-6

ECCN Code :

EAR99

Configuration :

SINGLE WITH BUILT-IN DIODE

Power Dissipation-Max :

2W Ta

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

3.8A Ta

Packaging :

Tube

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

511pF @ 25V

Published :

2003

Operating Temperature (Max) :

150°C

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G6

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Voltage (Vdss) :

30V

Number of Elements :

1

Drain-source On Resistance-Max :

0.098Ohm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON