IRF5804TRPBF
- Mfr.Part #
- IRF5804TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 2.5A MICRO6
- Stock
- 22,623
- In Stock :
- 22,623
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Supplier Device Package :
- Micro6™(TSOP-6)
- Number of Pins :
- 6
- Gate to Source Voltage (Vgs) :
- 20V
- Max Operating Temperature :
- 150°C
- Power Dissipation-Max :
- 2W Ta
- REACH SVHC :
- No SVHC
- Power Dissipation :
- 2W
- Operating Temperature :
- -55°C~150°C TJ
- Series :
- HEXFET®
- Drain to Source Breakdown Voltage :
- -40V
- Number of Elements :
- 1
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Min Operating Temperature :
- -55°C
- Termination :
- SMD/SMT
- Rds On Max :
- 198 mΩ
- Current - Continuous Drain (Id) @ 25°C :
- 2.5A Ta
- Gate Charge (Qg) (Max) @ Vgs :
- 8.5nC @ 10V
- Published :
- 2010
- Mounting Type :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 40V
- Input Capacitance (Ciss) (Max) @ Vds :
- 680pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Continuous Drain Current (ID) :
- -2.5A
- Mount :
- Surface Mount
- Dual Supply Voltage :
- -40V
- Rds On (Max) @ Id, Vgs :
- 198mOhm @ 2.5A, 10V
- Drain to Source Resistance :
- 334mOhm
- Vgs (Max) :
- ±20V
- Nominal Vgs :
- -3 V
- Threshold Voltage :
- -3V
- Input Capacitance :
- 680pF
- FET Type :
- P-Channel
- RoHS Status :
- RoHS Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Datasheets
- IRF5804TRPBF

P-Channel Tape & Reel (TR) 198mOhm @ 2.5A, 10V ±20V 680pF @ 25V 8.5nC @ 10V 40V SOT-23-6 Thin, TSOT-23-6
IRF5804TRPBF Overview
A device's maximal input capacitance is 680pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is -2.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 334mOhm.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -3V threshold voltage.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).
IRF5804TRPBF Features
a continuous drain current (ID) of -2.5A
a drain-to-source breakdown voltage of -40V voltage
single MOSFETs transistor is 334mOhm
a threshold voltage of -3V
a 40V drain to source voltage (Vdss)
IRF5804TRPBF Applications
There are a lot of Infineon Technologies
IRF5804TRPBF applications of single MOSFETs transistors.
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
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