IRF5804TRPBF

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Mfr.Part #
IRF5804TRPBF
Manufacturer
Infineon Technologies
Package / Case
SOT-23-6 Thin, TSOT-23-6
Datasheet
Download
Description
MOSFET P-CH 40V 2.5A MICRO6
Stock
22,623
In Stock :
22,623

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Manufacturer :
Infineon Technologies
Product Category :
Transistors - FETs, MOSFETs - Single
Packaging :
Tape and Reel (TR)
Supplier Device Package :
Micro6™(TSOP-6)
Number of Pins :
6
Gate to Source Voltage (Vgs) :
20V
Max Operating Temperature :
150°C
Power Dissipation-Max :
2W Ta
REACH SVHC :
No SVHC
Power Dissipation :
2W
Operating Temperature :
-55°C~150°C TJ
Series :
HEXFET®
Drain to Source Breakdown Voltage :
-40V
Number of Elements :
1
Vgs(th) (Max) @ Id :
3V @ 250µA
Min Operating Temperature :
-55°C
Termination :
SMD/SMT
Rds On Max :
198 mΩ
Current - Continuous Drain (Id) @ 25°C :
2.5A Ta
Gate Charge (Qg) (Max) @ Vgs :
8.5nC @ 10V
Published :
2010
Mounting Type :
Surface Mount
Drain to Source Voltage (Vdss) :
40V
Input Capacitance (Ciss) (Max) @ Vds :
680pF @ 25V
Moisture Sensitivity Level (MSL) :
2 (1 Year)
Continuous Drain Current (ID) :
-2.5A
Mount :
Surface Mount
Dual Supply Voltage :
-40V
Rds On (Max) @ Id, Vgs :
198mOhm @ 2.5A, 10V
Drain to Source Resistance :
334mOhm
Vgs (Max) :
±20V
Nominal Vgs :
-3 V
Threshold Voltage :
-3V
Input Capacitance :
680pF
FET Type :
P-Channel
RoHS Status :
RoHS Compliant
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Package / Case :
SOT-23-6 Thin, TSOT-23-6
Datasheets
IRF5804TRPBF
Introducing Transistors - FETs, MOSFETs - Single Infineon Technologies IRF5804TRPBF from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:6, Operating Temperature:-55°C~150°C TJ, Mounting Type:Surface Mount, Package / Case:SOT-23-6 Thin, TSOT-23-6, IRF5804TRPBF pinout, IRF5804TRPBF datasheet PDF, IRF5804TRPBF amp .Beyond Transistors - FETs, MOSFETs - Single Infineon Technologies IRF5804TRPBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Infineon Technologies IRF5804TRPBF


P-Channel Tape & Reel (TR) 198mOhm @ 2.5A, 10V ±20V 680pF @ 25V 8.5nC @ 10V 40V SOT-23-6 Thin, TSOT-23-6

IRF5804TRPBF Overview


A device's maximal input capacitance is 680pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is -2.5A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is -40V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 334mOhm.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.An electrical device's threshold voltage is the point at which any of its operations will become active, and this transistor has a -3V threshold voltage.This transistor requires a 40V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 10V).

IRF5804TRPBF Features


a continuous drain current (ID) of -2.5A
a drain-to-source breakdown voltage of -40V voltage
single MOSFETs transistor is 334mOhm
a threshold voltage of -3V
a 40V drain to source voltage (Vdss)


IRF5804TRPBF Applications


There are a lot of Infineon Technologies
IRF5804TRPBF applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
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