IRF5803TRPBF
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- Mfr.Part #
- IRF5803TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 3.4A MICRO6
- Stock
- 239,067
- In Stock ：
- 239,067
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn-Off Delay Time :
- 88 ns
- Factory Lead Time :
- 12 Weeks
- REACH SVHC :
- No SVHC
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Number of Pins :
- 6
- Packaging :
- Tape and Reel (TR)
- Max Junction Temperature (Tj) :
- 150°C
- ECCN Code :
- EAR99
- Configuration :
- Single
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 2W Ta
- Length :
- 3.1mm
- Mount :
- Surface Mount
- Fall Time (Typ) :
- 50 ns
- Continuous Drain Current (ID) :
- -3.4A
- Rds On (Max) @ Id, Vgs :
- 112m Ω @ 3.4A, 10V
- Threshold Voltage :
- -3V
- Current Rating :
- -3.4A
- Height :
- 1.45mm
- Voltage - Rated DC :
- -40V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain to Source Voltage (Vdss) :
- 40V
- Mounting Type :
- Surface Mount
- FET Type :
- P-Channel
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Gate to Source Voltage (Vgs) :
- 20V
- Width :
- 1.4986mm
- Published :
- 2001
- Power Dissipation :
- 2W
- Rise Time :
- 550ns
- Turn On Delay Time :
- 43 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 37nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1110pF @ 25V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 3.4A Ta
- Terminal Finish :
- Matte Tin (Sn)
- Series :
- HEXFET®
- Lead Free :
- Contains Lead
- Drain to Source Breakdown Voltage :
- -40V
- Number of Channels :
- 1
- Resistance :
- 112MOhm
- Vgs (Max) :
- ±20V
- Datasheets
- IRF5803TRPBF
P-Channel Tape & Reel (TR) 112m Ω @ 3.4A, 10V ±20V 1110pF @ 25V 37nC @ 10V 40V SOT-23-6 Thin, TSOT-23-6
IRF5803TRPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1110pF @ 25V.This device conducts a continuous drain current (ID) of -3.4A, which is the maximum continuous current transistor can conduct.Using VGS=-40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -40V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 88 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 43 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -3V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IRF5803TRPBF Features
a continuous drain current (ID) of -3.4A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 88 ns
a threshold voltage of -3V
a 40V drain to source voltage (Vdss)
IRF5803TRPBF Applications
There are a lot of Infineon Technologies
IRF5803TRPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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