IRF5803TR
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- Mfr.Part #
- IRF5803TR
- Manufacturer
- Infineon Technologies
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 3.4A MICRO6
- Stock
- 43,147
- In Stock ：
- 43,147
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rds On (Max) @ Id, Vgs :
- 112m Ω @ 3.4A, 10V
- Current Rating :
- -3.4A
- Vgs (Max) :
- ±20V
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Input Capacitance (Ciss) (Max) @ Vds :
- 1110pF @ 25V
- Continuous Drain Current (ID) :
- -3.4A
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- Single
- Rise Time :
- 550ns
- Power Dissipation :
- 2W
- Gate Charge (Qg) (Max) @ Vgs :
- 37nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- FET Type :
- P-Channel
- Published :
- 2001
- JESD-609 Code :
- e3
- Operating Temperature :
- -55°C~150°C TJ
- Max Junction Temperature (Tj) :
- 150°C
- Current - Continuous Drain (Id) @ 25°C :
- 3.4A Ta
- Threshold Voltage :
- -3V
- Resistance :
- 112MOhm
- Mounting Type :
- Surface Mount
- Number of Pins :
- 6
- Lead Free :
- Contains Lead
- Length :
- 3.1mm
- Fall Time (Typ) :
- 50 ns
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Turn On Delay Time :
- 43 ns
- Series :
- HEXFET®
- Drain to Source Breakdown Voltage :
- -40V
- Turn-Off Delay Time :
- 88 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Height :
- 1.45mm
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Width :
- 1.4986mm
- Number of Channels :
- 1
- Factory Lead Time :
- 12 Weeks
- Drain to Source Voltage (Vdss) :
- 40V
- Terminal Finish :
- Matte Tin (Sn)
- Voltage - Rated DC :
- -40V
- Power Dissipation-Max :
- 2W Ta
- REACH SVHC :
- No SVHC
- Packaging :
- Tape and Reel (TR)
- Datasheets
- IRF5803TR
P-Channel Tape & Reel (TR) 112m Ω @ 3.4A, 10V ±20V 1110pF @ 25V 37nC @ 10V 40V SOT-23-6 Thin, TSOT-23-6
IRF5803TRPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1110pF @ 25V.This device conducts a continuous drain current (ID) of -3.4A, which is the maximum continuous current transistor can conduct.Using VGS=-40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -40V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 88 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 43 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has -3V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 40V.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IRF5803TRPBF Features
a continuous drain current (ID) of -3.4A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 88 ns
a threshold voltage of -3V
a 40V drain to source voltage (Vdss)
IRF5803TRPBF Applications
There are a lot of Infineon Technologies
IRF5803TRPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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