IRF5803D2TRPBF
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- Mfr.Part #
- IRF5803D2TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET P-CH 40V 3.4A 8SO
- Stock
- 4,829
- In Stock ：
- 4,829
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Radiation Hardening :
- No
- Configuration :
- Single
- Turn On Delay Time :
- 43 ns
- FET Type :
- P-Channel
- Gate to Source Voltage (Vgs) :
- 20V
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Vgs (Max) :
- ±20V
- Power Dissipation-Max :
- 2W Ta
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 2W
- Lead Free :
- Lead Free
- Termination :
- SMD/SMT
- RoHS Status :
- RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 1110pF @ 25V
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- ECCN Code :
- EAR99
- Dual Supply Voltage :
- 40V
- Published :
- 2001
- Operating Temperature :
- -55°C~150°C TJ
- Gate Charge (Qg) (Max) @ Vgs :
- 37nC @ 10V
- Series :
- FETKY™
- Rds On (Max) @ Id, Vgs :
- 112m Ω @ 3.4A, 10V
- Rise Time :
- 550ns
- Width :
- 3.9878mm
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Current - Continuous Drain (Id) @ 25°C :
- 3.4A Ta
- Continuous Drain Current (ID) :
- 3.4A
- Length :
- 4.9784mm
- Turn-Off Delay Time :
- 88 ns
- FET Feature :
- Schottky Diode (Isolated)
- Mounting Type :
- Surface Mount
- Fall Time (Typ) :
- 50 ns
- REACH SVHC :
- No SVHC
- Height :
- 1.4986mm
- Number of Pins :
- 8
- Drain to Source Breakdown Voltage :
- -40V
- Threshold Voltage :
- 3V
- Nominal Vgs :
- 3 V
- Datasheets
- IRF5803D2TRPBF
P-Channel Tape & Reel (TR) 112m Ω @ 3.4A, 10V ±20V 1110pF @ 25V 37nC @ 10V 8-SOIC (0.154, 3.90mm Width)
IRF5803D2TRPBF Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1110pF @ 25V.This device conducts a continuous drain current (ID) of 3.4A, which is the maximum continuous current transistor can conduct.Using VGS=-40V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of -40V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 88 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 43 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 4.5V 10V volts (4.5V 10V).
IRF5803D2TRPBF Features
a continuous drain current (ID) of 3.4A
a drain-to-source breakdown voltage of -40V voltage
the turn-off delay time is 88 ns
a threshold voltage of 3V
IRF5803D2TRPBF Applications
There are a lot of Infineon Technologies
IRF5803D2TRPBF applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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