IRF5803

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Transistor Application :

SWITCHING

Drain Current-Max (Abs) (ID) :

3.4A

Operating Temperature (Max) :

150°C

Input Capacitance (Ciss) (Max) @ Vds :

1110pF @ 25V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Surface Mount :

yes

Vgs (Max) :

±20V

ECCN Code :

EAR99

RoHS Status :

Non-RoHS Compliant

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

112m Ω @ 3.4A, 10V

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

27A

Terminal Position :

Dual

JESD-30 Code :

R-PDSO-G6

Packaging :

Tube

Power Dissipation-Max :

2W Ta

Current - Continuous Drain (Id) @ 25°C :

3.4A Ta

Drain to Source Voltage (Vdss) :

40V

Published :

2001

Drain-source On Resistance-Max :

0.112Ohm

DS Breakdown Voltage-Min :

40V

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Operating Mode :

ENHANCEMENT MODE

FET Type :

P-Channel

Number of Terminations :

6

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Series :

HEXFET®

Vgs(th) (Max) @ Id :

3V @ 250µA

JEDEC-95 Code :

MO-193AA

Mounting Type :

Surface Mount