IRF5802TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

1.6ns

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

6.8nC @ 10V

Power Dissipation-Max :

2W Ta

Drain Current-Max (Abs) (ID) :

0.9A

Continuous Drain Current (ID) :

900mA

Contact Plating :

Tin

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

900mA

Number of Terminations :

6

RoHS Status :

ROHS3 Compliant

Number of Elements :

1

Lead Free :

Contains Lead

Vgs (Max) :

±30V

Element Configuration :

Single

Nominal Vgs :

5.5 V

Current - Continuous Drain (Id) @ 25°C :

900mA Ta

Transistor Application :

SWITCHING

Gate to Source Voltage (Vgs) :

30V

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Terminal Form :

Gull wing

Threshold Voltage :

5.5V

Operating Temperature :

-55°C~150°C TJ

Dual Supply Voltage :

150V

Mount :

Surface Mount

Height :

900μm

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 540mA, 10V

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

7A

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Power Dissipation :

2W

FET Type :

N-Channel

Transistor Element Material :

SILICON

Radiation Hardening :

No

Voltage - Rated DC :

150V

JESD-609 Code :

e3

Published :

2001

Turn On Delay Time :

6 ns

Mounting Type :

Surface Mount

Turn-Off Delay Time :

7.5 ns

Width :

1.4986mm

Factory Lead Time :

12 Weeks

Number of Pins :

6

Drive Voltage (Max Rds On,Min Rds On) :

10V

Resistance :

1.2Ohm

Termination :

SMD/SMT

Terminal Position :

Dual

Fall Time (Typ) :

9.2 ns

Input Capacitance (Ciss) (Max) @ Vds :

88pF @ 25V

Length :

2.9972mm

ECCN Code :

EAR99

Avalanche Energy Rating (Eas) :

9.5 mJ

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

150V

Packaging :

Tape and Reel (TR)