IRF5802TR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Avalanche Energy Rating (Eas) :

9.5 mJ

Number of Terminations :

6

Nominal Vgs :

5.5 V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

REACH SVHC :

No SVHC

Threshold Voltage :

5.5V

Height :

900μm

Turn-Off Delay Time :

7.5 ns

Input Capacitance (Ciss) (Max) @ Vds :

88pF @ 25V

Operating Temperature :

-55°C~150°C TJ

Gate Charge (Qg) (Max) @ Vgs :

6.8nC @ 10V

Current - Continuous Drain (Id) @ 25°C :

900mA Ta

Resistance :

1.2Ohm

Fall Time (Typ) :

9.2 ns

Dual Supply Voltage :

150V

Turn On Delay Time :

6 ns

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

0.9A

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Contact Plating :

Tin

Radiation Hardening :

No

Number of Pins :

6

Drain to Source Breakdown Voltage :

150V

Terminal Form :

Gull wing

Drive Voltage (Max Rds On,Min Rds On) :

10V

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Gate to Source Voltage (Vgs) :

30V

Lead Free :

Contains Lead

Current Rating :

900mA

Termination :

SMD/SMT

JESD-609 Code :

e3

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Published :

2001

Width :

1.4986mm

Continuous Drain Current (ID) :

900mA

Transistor Application :

SWITCHING

Rise Time :

1.6ns

Number of Elements :

1

Factory Lead Time :

12 Weeks

Length :

2.9972mm

Packaging :

Tape and Reel (TR)

FET Type :

N-Channel

Element Configuration :

Single

Voltage - Rated DC :

150V

Series :

HEXFET®

Power Dissipation :

2W

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 540mA, 10V

Vgs (Max) :

±30V

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

7A

Terminal Position :

Dual

Power Dissipation-Max :

2W Ta