IRF5802

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Qualification Status :

Not Qualified

Number of Terminations :

6

Transistor Element Material :

SILICON

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

6.8nC @ 10V

Operating Temperature (Max) :

150°C

FET Type :

N-Channel

Vgs (Max) :

±30V

Input Capacitance (Ciss) (Max) @ Vds :

88pF @ 25V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Form :

Gull wing

Configuration :

SINGLE WITH BUILT-IN DIODE

Surface Mount :

yes

Drain to Source Voltage (Vdss) :

150V

Rds On (Max) @ Id, Vgs :

1.2 Ω @ 540mA, 10V

Avalanche Energy Rating (Eas) :

9.5 mJ

Pulsed Drain Current-Max (IDM) :

7A

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Series :

HEXFET®

Mounting Type :

Surface Mount

Published :

2010

Power Dissipation-Max :

2W Ta

ECCN Code :

EAR99

RoHS Status :

Non-RoHS Compliant

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Terminal Position :

Dual

Number of Elements :

1

Transistor Application :

SWITCHING

DS Breakdown Voltage-Min :

150V

JESD-30 Code :

R-PDSO-G6

Current - Continuous Drain (Id) @ 25°C :

900mA Ta

Drain Current-Max (Abs) (ID) :

0.9A

Operating Mode :

ENHANCEMENT MODE