IRF5801TRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Factory Lead Time :

12 Weeks

Terminal Form :

Gull wing

Vgs(th) (Max) @ Id :

5.5V @ 250µA

Element Configuration :

Single

Vgs (Max) :

±30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Avalanche Energy Rating (Eas) :

9.9 mJ

Nominal Vgs :

5.5 V

Continuous Drain Current (ID) :

600mA

Mounting Type :

Surface Mount

Operating Mode :

ENHANCEMENT MODE

Current - Continuous Drain (Id) @ 25°C :

600mA Ta

Lead Free :

Contains Lead

Radiation Hardening :

No

Series :

HEXFET®

Power Dissipation-Max :

2W Ta

Current Rating :

600mA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

1

Rise Time :

8ns

Gate Charge (Qg) (Max) @ Vgs :

3.9nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

88pF @ 25V

Turn On Delay Time :

6.5 ns

Terminal Position :

Dual

JESD-609 Code :

e3

Turn-Off Delay Time :

8.8 ns

Resistance :

2.2Ohm

Drain to Source Breakdown Voltage :

200V

Mount :

Surface Mount

Transistor Application :

SWITCHING

FET Type :

N-Channel

Number of Terminations :

6

Number of Pins :

6

Published :

2002

Termination :

SMD/SMT

RoHS Status :

ROHS3 Compliant

Terminal Finish :

Matte Tin (Sn)

Pulsed Drain Current-Max (IDM) :

4.8A

Fall Time (Typ) :

19 ns

Voltage - Rated DC :

200V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Power Dissipation :

2W

Height :

990.6μm

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

5.5V

Length :

2.9972mm

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

2.2 Ω @ 360mA, 10V

Width :

1.7mm

Dual Supply Voltage :

200V