IRF5800TRPBF
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- Mfr.Part #
- IRF5800TRPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- SOT-23-6 Thin, TSOT-23-6
- Datasheet
- Download
- Description
- MOSFET P-CH 30V 4A MICRO6
- Stock
- 21,769
- In Stock ：
- 21,769
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Supplier Device Package :
- Micro6™(TSOP-6)
- Dual Supply Voltage :
- -30V
- Gate to Source Voltage (Vgs) :
- 20V
- FET Type :
- P-Channel
- Drain to Source Voltage (Vdss) :
- 30V
- Threshold Voltage :
- -1V
- Number of Pins :
- 6
- Max Operating Temperature :
- 150°C
- Vgs (Max) :
- ±20V
- Drain to Source Resistance :
- 85mOhm
- Nominal Vgs :
- -1 V
- Power Dissipation-Max :
- 2W Ta
- Mounting Type :
- Surface Mount
- Continuous Drain Current (ID) :
- -4A
- Gate Charge (Qg) (Max) @ Vgs :
- 17nC @ 10V
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Input Capacitance :
- 535pF
- Rds On Max :
- 85 mΩ
- Packaging :
- Tape and Reel (TR)
- Number of Elements :
- 1
- RoHS Status :
- RoHS Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 535pF @ 25V
- Turn On Delay Time :
- 11.4 ns
- REACH SVHC :
- No SVHC
- Package / Case :
- SOT-23-6 Thin, TSOT-23-6
- Power Dissipation :
- 2W
- Turn-Off Delay Time :
- 24 ns
- Min Operating Temperature :
- -55°C
- Lead Free :
- Lead Free
- Drain to Source Breakdown Voltage :
- -30V
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Termination :
- SMD/SMT
- Rds On (Max) @ Id, Vgs :
- 85mOhm @ 4A, 10V
- Series :
- HEXFET®
- Operating Temperature :
- -55°C~150°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 4A Ta
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Published :
- 2010
- Datasheets
- IRF5800TRPBF
P-Channel Tape & Reel (TR) 85mOhm @ 4A, 10V ±20V 535pF @ 25V 17nC @ 10V 30V SOT-23-6 Thin, TSOT-23-6
IRF5800TRPBF Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 535pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is -4A amps.In this device, the drain-source breakdown voltage is -30V and VGS=-30V, so the drain-source breakdown voltage is -30V in this case.It is [24 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 85mOhm.A turn-on delay time of 11.4 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is -1V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (4.5V 10V).
IRF5800TRPBF Features
a continuous drain current (ID) of -4A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 24 ns
single MOSFETs transistor is 85mOhm
a threshold voltage of -1V
a 30V drain to source voltage (Vdss)
IRF5800TRPBF Applications
There are a lot of Infineon Technologies
IRF5800TRPBF applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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