IRF5800

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs(th) (Max) @ Id :

1V @ 250μA

Number of Elements :

1

JEDEC-95 Code :

MO-193AA

ECCN Code :

EAR99

Drain Current-Max (Abs) (ID) :

4A

Published :

2003

Time@Peak Reflow Temperature-Max (s) :

30

Series :

HEXFET®

Transistor Element Material :

SILICON

FET Type :

P-Channel

Mounting Type :

Surface Mount

DS Breakdown Voltage-Min :

30V

JESD-30 Code :

R-PDSO-G6

Number of Terminations :

6

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

17nC @ 10V

Pulsed Drain Current-Max (IDM) :

32A

Input Capacitance (Ciss) (Max) @ Vds :

535pF @ 25V

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

4A Ta

Additional Feature :

ULTRA LOW RESISTANCE

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Transistor Application :

SWITCHING

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Vgs (Max) :

±20V

Drain-source On Resistance-Max :

0.085Ohm

JESD-609 Code :

e3

Power Dissipation-Max :

2W Ta

Terminal Finish :

Matte Tin (Sn)

Peak Reflow Temperature (Cel) :

260

Surface Mount :

yes

Configuration :

SINGLE WITH BUILT-IN DIODE

Rds On (Max) @ Id, Vgs :

85m Ω @ 4A, 10V

Avalanche Energy Rating (Eas) :

20.6 mJ

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Drain to Source Voltage (Vdss) :

30V

Packaging :

Tube

Terminal Position :

Dual

RoHS Status :

Non-RoHS Compliant