IRF540ZSTRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Drain Current-Max (Abs) (ID) :

36A

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

92W Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

JESD-609 Code :

e3

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

4V @ 250µA

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Published :

2010

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

100V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

JESD-30 Code :

R-PSSO-G2

Operating Temperature :

-55°C~175°C TJ

Time@Peak Reflow Temperature-Max (s) :

30

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Rds On (Max) @ Id, Vgs :

26.5m Ω @ 22A, 10V

Number of Elements :

1

Case Connection :

DRAIN

Drain-source On Resistance-Max :

0.0265Ohm

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Transistor Element Material :

SILICON

DS Breakdown Voltage-Min :

100V

FET Type :

N-Channel

Packaging :

Tape and Reel (TR)

Series :

HEXFET®

Drive Voltage (Max Rds On,Min Rds On) :

10V

Peak Reflow Temperature (Cel) :

260

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

Number of Terminations :

2

Avalanche Energy Rating (Eas) :

120 mJ

Pulsed Drain Current-Max (IDM) :

140A

Terminal Form :

Gull wing

Surface Mount :

yes