IRF540ZSTRR

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

Case Connection :

DRAIN

ECCN Code :

EAR99

Terminal Position :

Single

Number of Terminations :

2

JESD-609 Code :

e3

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Series :

HEXFET®

Vgs (Max) :

±20V

DS Breakdown Voltage-Min :

100V

Drain Current-Max (Abs) (ID) :

36A

Avalanche Energy Rating (Eas) :

120 mJ

Mounting Type :

Surface Mount

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 25V

Rds On (Max) @ Id, Vgs :

26.5m Ω @ 22A, 10V

Vgs(th) (Max) @ Id :

4V @ 250µA

Published :

2003

Transistor Application :

SWITCHING

Power Dissipation-Max :

92W Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Configuration :

SINGLE WITH BUILT-IN DIODE

Qualification Status :

Not Qualified

Drain-source On Resistance-Max :

0.0265Ohm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

-55°C~175°C TJ

Drain to Source Voltage (Vdss) :

100V

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Packaging :

Tape and Reel (TR)

Terminal Form :

Gull wing

Surface Mount :

yes

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

Non-RoHS Compliant

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

140A

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Time@Peak Reflow Temperature-Max (s) :

30