IRF540ZSPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Pins :

3

Continuous Drain Current (ID) :

36A

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Series :

HEXFET®

Vgs(th) (Max) @ Id :

4V @ 250µA

Vgs (Max) :

±20V

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Current Rating :

36A

Nominal Vgs :

4 V

Turn On Delay Time :

15 ns

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Power Dissipation-Max :

92W Tc

Number of Terminations :

2

Case Connection :

DRAIN

Radiation Hardening :

No

FET Type :

N-Channel

Fall Time (Typ) :

39 ns

Contact Plating :

Tin

Width :

9.65mm

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Power Dissipation :

92W

Rise Time :

51ns

JESD-30 Code :

R-PSSO-G2

Recovery Time :

50 ns

Published :

2003

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 25V

Terminal Form :

Gull wing

Element Configuration :

Single

REACH SVHC :

No SVHC

Packaging :

Tube

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Dual Supply Voltage :

100V

Threshold Voltage :

4V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Height :

4.826mm

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

30

Turn-Off Delay Time :

43 ns

Rds On (Max) @ Id, Vgs :

26.5m Ω @ 22A, 10V

Resistance :

26.5mOhm

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

100V

Factory Lead Time :

9 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

10.668mm

Mount :

Surface Mount

Operating Temperature :

-55°C~175°C TJ

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Lead Free :

Contains Lead, Lead Free

Drain to Source Breakdown Voltage :

100V