IRF540ZPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Series :

HEXFET®

ECCN Code :

EAR99

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Power Dissipation-Max :

92W Tc

Time@Peak Reflow Temperature-Max (s) :

30

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Turn On Delay Time :

15 ns

Mount :

Through Hole

Element Configuration :

Single

Transistor Element Material :

SILICON

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Mounting Type :

Through Hole

Width :

4.69mm

Factory Lead Time :

12 Weeks

Drain to Source Breakdown Voltage :

100V

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

39 ns

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

63nC @ 10V

Number of Elements :

1

Power Dissipation :

92W

REACH SVHC :

No SVHC

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

1770pF @ 25V

Length :

10.54mm

Rds On (Max) @ Id, Vgs :

26.5m Ω @ 22A, 10V

Recovery Time :

50 ns

Case Connection :

DRAIN

Height :

8.77mm

Turn-Off Delay Time :

43 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

Dual Supply Voltage :

100V

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Contains Lead, Lead Free

Rise Time :

51ns

Continuous Drain Current (ID) :

36A

Terminal Finish :

MATTE TIN OVER NICKEL

Voltage - Rated DC :

100V

Peak Reflow Temperature (Cel) :

250

Nominal Vgs :

4 V

Number of Terminations :

3

Packaging :

Tube

Current - Continuous Drain (Id) @ 25°C :

36A Tc

Gate to Source Voltage (Vgs) :

20V

JESD-609 Code :

e3

Threshold Voltage :

4V

Resistance :

26.5Ohm

Published :

2003

Current Rating :

36A

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Forward Voltage :

1.3V

Termination :

Through Hole