IRF540ZLPBF
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- Mfr.Part #
- IRF540ZLPBF
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 36A TO262
- Stock
- 7,546
- In Stock ：
- 7,546
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Transistor Application :
- SWITCHING
- Continuous Drain Current (ID) :
- 36A
- Length :
- 10.668mm
- Width :
- 4.826mm
- Operating Temperature :
- -55°C~175°C TJ
- Vgs (Max) :
- ±20V
- Transistor Element Material :
- SILICON
- Rise Time :
- 51ns
- Fall Time (Typ) :
- 39 ns
- Power Dissipation :
- 92W
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Rds On (Max) @ Id, Vgs :
- 26.5m Ω @ 22A, 10V
- Published :
- 2010
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Current Rating :
- 36A
- Power Dissipation-Max :
- 92W Tc
- Factory Lead Time :
- 12 Weeks
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Radiation Hardening :
- No
- Drain to Source Breakdown Voltage :
- 100V
- Turn-Off Delay Time :
- 43 ns
- Turn On Delay Time :
- 15 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 63nC @ 10V
- Number of Elements :
- 1
- Series :
- HEXFET®
- Current - Continuous Drain (Id) @ 25°C :
- 36A Tc
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Terminal Finish :
- Matte Tin (Sn) - with Nickel (Ni) barrier
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Height :
- 9.65mm
- JESD-609 Code :
- e3
- Case Connection :
- DRAIN
- Input Capacitance (Ciss) (Max) @ Vds :
- 1770pF @ 25V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tube
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 100V
- Nominal Vgs :
- 4 V
- Number of Pins :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Number of Terminations :
- 3
- Resistance :
- 26.5mOhm
- Datasheets
- IRF540ZLPBF
N-Channel Tube 26.5m Ω @ 22A, 10V ±20V 1770pF @ 25V 63nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA
IRF540ZLPBF Overview
The maximum input capacitance of this device is 1770pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 36A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 43 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 15 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
IRF540ZLPBF Features
a continuous drain current (ID) of 36A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 43 ns
IRF540ZLPBF Applications
There are a lot of Infineon Technologies
IRF540ZLPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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