IRF540STRRPBF
- Mfr.Part #
- IRF540STRRPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 28A D2PAK
- Stock
- 1,053
- In Stock :
- 1,053
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Vgs (Max) :
- ±20V
- Supplier Device Package :
- D2PAK (TO-263)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Max Operating Temperature :
- 175°C
- Packaging :
- Tape and Reel (TR)
- Gate Charge (Qg) (Max) @ Vgs :
- 72nC @ 10V
- Continuous Drain Current (ID) :
- 28A
- Power Dissipation :
- 3.7W
- Fall Time (Typ) :
- 43 ns
- RoHS Status :
- ROHS3 Compliant
- Contact Plating :
- Tin
- Rds On Max :
- 77 mΩ
- Length :
- 10.67mm
- Drain to Source Resistance :
- 77mOhm
- Operating Temperature :
- -55°C~175°C TJ
- Turn On Delay Time :
- 11 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Min Operating Temperature :
- -55°C
- Input Capacitance (Ciss) (Max) @ Vds :
- 1700pF @ 25V
- Input Capacitance :
- 1.7nF
- Number of Pins :
- 3
- Drain to Source Breakdown Voltage :
- 100V
- Width :
- 9.65mm
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Mount :
- Surface Mount
- Turn-Off Delay Time :
- 53 ns
- Power Dissipation-Max :
- 3.7W Ta 150W Tc
- Weight :
- 1.437803g
- Drain to Source Voltage (Vdss) :
- 100V
- Factory Lead Time :
- 8 Weeks
- Rise Time :
- 44ns
- Number of Channels :
- 1
- FET Type :
- N-Channel
- Height :
- 4.83mm
- Published :
- 2016
- Mounting Type :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 28A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 20V
- Element Configuration :
- Single
- Number of Elements :
- 1
- Rds On (Max) @ Id, Vgs :
- 77mOhm @ 17A, 10V
- Datasheets
- IRF540STRRPBF
N-Channel Tape & Reel (TR) 77mOhm @ 17A, 10V ±20V 1700pF @ 25V 72nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF540STRRPBF Overview
The maximum input capacitance of this device is 1700pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 28A.When VGS=100V, and ID flows to VDS at 100VVDS, the drain-source breakdown voltage is 100V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 53 ns.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 77mOhm.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 11 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.The drain-to-source voltage (Vdss) of this transistor needs to be at 100V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
IRF540STRRPBF Features
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 53 ns
single MOSFETs transistor is 77mOhm
a 100V drain to source voltage (Vdss)
IRF540STRRPBF Applications
There are a lot of Vishay Siliconix
IRF540STRRPBF applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
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