IRF540STRLPBF
- Mfr.Part #
- IRF540STRLPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 28A D2PAK
- Stock
- 6,738
- In Stock :
- 6,738
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Current - Continuous Drain (Id) @ 25°C :
- 28A Tc
- Number of Pins :
- 3
- Number of Channels :
- 1
- Packaging :
- Tape and Reel (TR)
- Turn-Off Delay Time :
- 19 ns
- Weight :
- 1.437803g
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Rds On Max :
- 12 mΩ
- Resistance :
- 77mOhm
- Rise Time :
- 30ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Elements :
- 1
- Published :
- 2013
- Vgs (Max) :
- ±20V
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 77mOhm @ 17A, 10V
- Lead Free :
- Lead Free
- Factory Lead Time :
- 8 Weeks
- Power Dissipation-Max :
- 3.7W Ta 150W Tc
- Fall Time (Typ) :
- 20 ns
- Drain to Source Voltage (Vdss) :
- 100V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Operating Temperature :
- 175°C
- Height :
- 4.83mm
- Turn On Delay Time :
- 8.8 ns
- Power Dissipation :
- 3.7W
- Input Capacitance (Ciss) (Max) @ Vds :
- 1700pF @ 25V
- Width :
- 9.65mm
- Min Operating Temperature :
- -55°C
- Drain to Source Resistance :
- 270mOhm
- Supplier Device Package :
- D2PAK (TO-263)
- Mount :
- Surface Mount
- Input Capacitance :
- 1.7nF
- Mounting Type :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Gate Charge (Qg) (Max) @ Vgs :
- 72nC @ 10V
- Operating Temperature :
- -55°C~175°C TJ
- Continuous Drain Current (ID) :
- 28A
- Length :
- 10.67mm
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- IRF540STRLPBF
N-Channel Tape & Reel (TR) 77mOhm @ 17A, 10V ±20V 1700pF @ 25V 72nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF540STRLPBF Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 1700pF @ 25V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 28A.With a drain-source breakdown voltage of 100V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 100V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 19 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 270mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8.8 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 100V.Using drive voltage (10V) reduces this device's overall power consumption.
IRF540STRLPBF Features
a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 19 ns
single MOSFETs transistor is 270mOhm
a 100V drain to source voltage (Vdss)
IRF540STRLPBF Applications
There are a lot of Vishay Siliconix
IRF540STRLPBF applications of single MOSFETs transistors.
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
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