IRF540S

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

2009

Drain to Source Breakdown Voltage :

100V

Max Operating Temperature :

175°C

Packaging :

Tube

Power Dissipation-Max :

3.7W Ta 150W Tc

Number of Pins :

3

Height :

4.83mm

Lead Free :

Lead Free

REACH SVHC :

Unknown

Nominal Vgs :

4 V

Number of Elements :

1

Vgs (Max) :

±20V

Rise Time :

44ns

Number of Channels :

1

Drain to Source Resistance :

77mOhm

Input Capacitance (Ciss) (Max) @ Vds :

1700pF @ 25V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Resistance :

77mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

3.7W

Min Operating Temperature :

-55°C

Vgs(th) (Max) @ Id :

4V @ 250µA

Drain to Source Voltage (Vdss) :

100V

FET Type :

N-Channel

Weight :

1.437803g

Operating Temperature :

-55°C~175°C TJ

Supplier Device Package :

D2PAK (TO-263)

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

72nC @ 10V

Mount :

Surface Mount

Width :

9.65mm

Factory Lead Time :

8 Weeks

Continuous Drain Current (ID) :

28A

Length :

10.67mm

Turn-Off Delay Time :

53 ns

Rds On Max :

77 mΩ

RoHS Status :

ROHS3 Compliant

Gate to Source Voltage (Vgs) :

20V

Current - Continuous Drain (Id) @ 25°C :

28A Tc

Rds On (Max) @ Id, Vgs :

77mOhm @ 17A, 10V

Input Capacitance :

1.7nF

Element Configuration :

Single

Fall Time (Typ) :

43 ns

Turn On Delay Time :

11 ns

Threshold Voltage :

4V