IRF540PBF

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Mfr.Part #
IRF540PBF
Manufacturer
Vishay
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 100V 28A TO220AB
Stock
20,454
In Stock :
20,454

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Manufacturer :
Vishay
Product Category :
Transistors - FETs, MOSFETs - Single
Voltage - Rated DC :
100V
Max Junction Temperature (Tj) :
175°C
Turn On Delay Time :
11 ns
Radiation Hardening :
No
Drive Voltage (Max Rds On,Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
77mOhm @ 17A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Weight :
6.000006g
Packaging :
Tube
Threshold Voltage :
4V
Voltage :
100V
RoHS Status :
ROHS3 Compliant
Resistance :
77mOhm
Supplier Device Package :
TO-220AB
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Package / Case :
TO-220-3
Mounting Type :
Through Hole
Gate to Source Voltage (Vgs) :
20V
Power Dissipation :
150W
Drain to Source Voltage (Vdss) :
100V
Height :
19.89mm
Number of Channels :
1
Input Capacitance :
1.7nF
Element Configuration :
Single
Lead Free :
Lead Free
Number of Elements :
1
REACH SVHC :
Unknown
Continuous Drain Current (ID) :
28A
Drain to Source Resistance :
77mOhm
Power Dissipation-Max :
150W Tc
Turn-Off Delay Time :
53 ns
FET Type :
N-Channel
Operating Temperature :
-55°C~175°C TJ
Mount :
Through Hole
Current - Continuous Drain (Id) @ 25°C :
28A Tc
Factory Lead Time :
8 Weeks
Rds On Max :
77 mΩ
Current Rating :
28A
Recovery Time :
360 ns
Rise Time :
44ns
Width :
4.7mm
Drain to Source Breakdown Voltage :
100V
Input Capacitance (Ciss) (Max) @ Vds :
1700pF @ 25V
Vgs (Max) :
±20V
Nominal Vgs :
4 V
Fall Time (Typ) :
43 ns
Max Operating Temperature :
175°C
Min Operating Temperature :
-55°C
Current :
28A
Gate Charge (Qg) (Max) @ Vgs :
72nC @ 10V
Published :
2008
Length :
10.51mm
Number of Pins :
3
Datasheets
IRF540PBF
Introducing Transistors - FETs, MOSFETs - Single Vishay IRF540PBF from Chip IC,where excellence meets affordability. This product stands out with its Voltage:100V, Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Channels:1, Operating Temperature:-55°C~175°C TJ, Number of Pins:3, IRF540PBF pinout, IRF540PBF datasheet PDF, IRF540PBF amp .Beyond Transistors - FETs, MOSFETs - Single Vishay IRF540PBF ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay IRF540PBF


N-Channel Tube 77mOhm @ 17A, 10V ±20V 1700pF @ 25V 72nC @ 10V 100V TO-220-3

IRF540PBF Overview


As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1700pF @ 25V.This device conducts a continuous drain current (ID) of 28A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 53 ns occurs as the input capacitance charges before drain current conduction commences.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the drain to source resistance is 77mOhm, which means the device is not biased.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 11 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 4V threshold voltage.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

IRF540PBF Features


a continuous drain current (ID) of 28A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 53 ns
single MOSFETs transistor is 77mOhm
a threshold voltage of 4V
a 100V drain to source voltage (Vdss)


IRF540PBF Applications


There are a lot of Vishay Siliconix
IRF540PBF applications of single MOSFETs transistors.


  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
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