IRF540NSTRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Mounting Type :

Surface Mount

Number of Terminations :

2

DS Breakdown Voltage-Min :

100V

JESD-30 Code :

R-PSSO-G2

Drain-source On Resistance-Max :

0.044Ohm

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Vgs (Max) :

±20V

Published :

1997

Rds On (Max) @ Id, Vgs :

44m Ω @ 16A, 10V

Case Connection :

DRAIN

Transistor Application :

SWITCHING

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Configuration :

SINGLE WITH BUILT-IN DIODE

Operating Temperature :

-55°C~175°C TJ

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

1960pF @ 25V

ECCN Code :

EAR99

Series :

HEXFET®

Pulsed Drain Current-Max (IDM) :

110A

Drain to Source Voltage (Vdss) :

100V

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Power Dissipation-Max :

130W Tc

Drain Current-Max (Abs) (ID) :

33A

Avalanche Energy Rating (Eas) :

185 mJ

Number of Elements :

1

Transistor Element Material :

SILICON

Surface Mount :

yes

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE