IRF540NLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Nominal Vgs :

4 V

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Transistor Application :

SWITCHING

Peak Reflow Temperature (Cel) :

260

Turn-Off Delay Time :

39 ns

Mount :

Through Hole

REACH SVHC :

No SVHC

Number of Pins :

3

Operating Temperature :

-55°C~175°C TJ

Factory Lead Time :

14 Weeks

Packaging :

Tube

Number of Terminations :

3

Voltage - Rated DC :

100V

Package / Case :

TO-262-3 Long Leads, I2Pak, TO-262AA

Resistance :

44mOhm

Drain to Source Breakdown Voltage :

100V

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

33A

Case Connection :

DRAIN

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

Rise Time :

35ns

Power Dissipation :

130W

Width :

4.826mm

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

44m Ω @ 16A, 10V

Current - Continuous Drain (Id) @ 25°C :

33A Tc

Gate Charge (Qg) (Max) @ Vgs :

71nC @ 10V

Vgs (Max) :

±20V

Height :

9.65mm

Turn On Delay Time :

11 ns

Published :

2004

Vgs(th) (Max) @ Id :

4V @ 250µA

Drive Voltage (Max Rds On,Min Rds On) :

10V

Radiation Hardening :

No

Length :

10.668mm

Terminal Position :

Single

Input Capacitance (Ciss) (Max) @ Vds :

1960pF @ 25V

JESD-609 Code :

e3

Mounting Type :

Through Hole

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Threshold Voltage :

4V

Time@Peak Reflow Temperature-Max (s) :

30

Current Rating :

33A

Fall Time (Typ) :

35 ns

Gate to Source Voltage (Vgs) :

20V

Series :

HEXFET®

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

Number of Elements :

1

Power Dissipation-Max :

130W Tc