IRF540NL
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- Mfr.Part #
- IRF540NL
- Manufacturer
- Infineon Technologies
- Package / Case
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 33A TO262
- Stock
- 24,009
- In Stock ：
- 24,009
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- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Case Connection :
- DRAIN
- Package / Case :
- TO-262-3 Long Leads, I2Pak, TO-262AA
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- RoHS Status :
- Non-RoHS Compliant
- Avalanche Energy Rating (Eas) :
- 185 mJ
- Gate Charge (Qg) (Max) @ Vgs :
- 71nC @ 10V
- Power Dissipation-Max :
- 130W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 33A Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Mode :
- ENHANCEMENT MODE
- Rds On (Max) @ Id, Vgs :
- 44m Ω @ 16A, 10V
- Drain Current-Max (Abs) (ID) :
- 33A
- Number of Elements :
- 1
- Additional Feature :
- AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
- Terminal Position :
- Single
- Drain to Source Voltage (Vdss) :
- 100V
- DS Breakdown Voltage-Min :
- 100V
- Vgs (Max) :
- ±20V
- Published :
- 2001
- Drain-source On Resistance-Max :
- 0.044Ohm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Pulsed Drain Current-Max (IDM) :
- 110A
- JESD-30 Code :
- R-PSIP-T3
- Mounting Type :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Packaging :
- Tube
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Application :
- SWITCHING
- FET Type :
- N-Channel
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Series :
- HEXFET®
- Operating Temperature :
- -55°C~175°C TJ
- Input Capacitance (Ciss) (Max) @ Vds :
- 1960pF @ 25V
- Surface Mount :
- No
- Datasheets
- IRF540NL
N-Channel Tube 44m Ω @ 16A, 10V ±20V 1960pF @ 25V 71nC @ 10V 100V TO-262-3 Long Leads, I2Pak, TO-262AA
IRF540NL Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 185 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1960pF @ 25V.The drain current is the maximum continuous current this device can conduct, which is 33A.Pulsed drain current is maximum rated peak drain current 110A.A normal operation of the DS requires keeping the breakdown voltage above 100V.This transistor requires a drain-source voltage (Vdss) of 100V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
IRF540NL Features
the avalanche energy rating (Eas) is 185 mJ
based on its rated peak drain current 110A.
a 100V drain to source voltage (Vdss)
IRF540NL Applications
There are a lot of Infineon Technologies
IRF540NL applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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