IRF540A

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Mfr.Part #
IRF540A
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 100V 28A TO220-3
Stock
24,397
In Stock :
24,397

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Manufacturer :
onsemi
Product Category :
Transistors - FETs, MOSFETs - Single
Number of Pins :
3
Mount :
Through Hole
Gate to Source Voltage (Vgs) :
20V
Package / Case :
TO-220-3
Number of Elements :
1
Power Dissipation-Max :
107W Tc
Input Capacitance (Ciss) (Max) @ Vds :
1710pF @ 25V
Operating Temperature :
-55°C~175°C TJ
Rise Time :
18ns
Gate Charge (Qg) (Max) @ Vgs :
78nC @ 10V
Mounting Type :
Through Hole
FET Type :
N-Channel
Rds On (Max) @ Id, Vgs :
52m Ω @ 14A, 10V
Width :
10.67mm
Fall Time (Typ) :
56 ns
Power Dissipation :
107W
Published :
1997
Nominal Vgs :
4 V
Turn-Off Delay Time :
90 ns
REACH SVHC :
No SVHC
Drain to Source Breakdown Voltage :
100V
Current - Continuous Drain (Id) @ 25°C :
28A Tc
Termination :
Through Hole
RoHS Status :
RoHS Compliant
Element Configuration :
Single
Resistance :
52mOhm
Packaging :
Tube
Drive Voltage (Max Rds On,Min Rds On) :
10V
Continuous Drain Current (ID) :
28A
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Vgs(th) (Max) @ Id :
4V @ 250µA
Lead Free :
Lead Free
Dual Supply Voltage :
100V
Datasheets
IRF540A
Introducing Transistors - FETs, MOSFETs - Single onsemi IRF540A from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-220-3, Operating Temperature:-55°C~175°C TJ, Mounting Type:Through Hole, IRF540A pinout, IRF540A datasheet PDF, IRF540A amp .Beyond Transistors - FETs, MOSFETs - Single onsemi IRF540A ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi IRF540A


N-Channel Tube 52m Ω @ 14A, 10V 1710pF @ 25V 78nC @ 10V TO-220-3

IRF540A  Description


  Power MOSFET  IRF540A  is a special type of metal oxide semiconductor field effect transistor. It is specially designed to deal with high-level power. The power MOSFET adopts V-shaped structure. Therefore, it is also known as VmurMOSFET.VFET.


IRF540A    Features

 

Avalanche Rugged Technology

Rugged Gate Oxide Technology

 Lower Input Capacitance

Improved Gate Charge

Extended Safe Operating Area

175c Operating Temperature

Lower Leakage Current:10A(Max) @Vs=100V

 Lower RDS(ON):0.041 Ω(Typ.)

 

IRF540A    Applications


high-level power

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