IRF540,127

Manufacturer :

NXP Semiconductors

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

92A

Reach Compliance Code :

Unknown

Configuration :

SINGLE WITH BUILT-IN DIODE

Pin Count :

3

Transistor Element Material :

SILICON

Vgs(th) (Max) @ Id :

4V @ 1mA

Rds On (Max) @ Id, Vgs :

77m Ω @ 17A, 10V

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

1187pF @ 25V

Drain Current-Max (Abs) (ID) :

23A

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Power Dissipation-Max :

100W Tc

Number of Elements :

1

Avalanche Energy Rating (Eas) :

230 mJ

Case Connection :

DRAIN

Drain to Source Voltage (Vdss) :

100V

JESD-30 Code :

R-PSFM-T3

Operating Temperature :

-55°C~175°C TJ

Terminal Position :

Single

ECCN Code :

EAR99

Package / Case :

TO-220-3

Gate Charge (Qg) (Max) @ Vgs :

65nC @ 10V

Drain-source On Resistance-Max :

0.077Ohm

Terminal Finish :

Matte Tin (Sn)

JEDEC-95 Code :

TO-220AB

Series :

TrenchMOS™

Qualification Status :

Not Qualified

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Published :

1999

Surface Mount :

No

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Packaging :

Tube

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

23A Tc

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Terminations :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

DS Breakdown Voltage-Min :

100V