IRF530STRRPBF

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Single

RoHS Status :

ROHS3 Compliant

Power Dissipation :

3.7W

Drain to Source Voltage (Vdss) :

100V

Supplier Device Package :

TO-263 (D2Pak)

Turn On Delay Time :

10 ns

Drain to Source Resistance :

160mOhm

Length :

10.67mm

Vgs (Max) :

±20V

Number of Pins :

3

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Power Dissipation-Max :

3.7W Ta 88W Tc

Min Operating Temperature :

-55°C

FET Type :

N-Channel

Weight :

1.437803g

Width :

9.65mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Max Operating Temperature :

175°C

Rds On (Max) @ Id, Vgs :

160mOhm @ 8.4A, 10V

Fall Time (Typ) :

24 ns

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

14A Tc

Continuous Drain Current (ID) :

14A

Height :

4.83mm

Rise Time :

34ns

Factory Lead Time :

8 Weeks

Number of Channels :

1

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

23 ns

Published :

2014

Rds On Max :

160 mΩ

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Input Capacitance (Ciss) (Max) @ Vds :

670pF @ 25V

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Elements :

1

Mount :

Surface Mount

Input Capacitance :

670pF