IRF530STRLPBF
- Mfr.Part #
- IRF530STRLPBF
- Manufacturer
- Vishay
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 14A D2PAK
- Stock
- 138
- In Stock :
- 138
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Packaging :
- Tape and Reel (TR)
- Length :
- 10.67mm
- Height :
- 4.83mm
- Gate to Source Voltage (Vgs) :
- 20V
- Continuous Drain Current (ID) :
- 14A
- Mount :
- Surface Mount
- Drain to Source Voltage (Vdss) :
- 100V
- Power Dissipation-Max :
- 3.7W Ta 88W Tc
- Element Configuration :
- Single
- Factory Lead Time :
- 8 Weeks
- Nominal Vgs :
- 2 V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Number of Pins :
- 3
- Number of Elements :
- 1
- Input Capacitance (Ciss) (Max) @ Vds :
- 670pF @ 25V
- Published :
- 2012
- Min Operating Temperature :
- -55°C
- Drain to Source Resistance :
- 160mOhm
- FET Type :
- N-Channel
- Rise Time :
- 34ns
- Weight :
- 1.946308g
- Fall Time (Typ) :
- 24 ns
- Vgs (Max) :
- ±20V
- Turn-Off Delay Time :
- 23 ns
- Current - Continuous Drain (Id) @ 25°C :
- 14A Tc
- Max Operating Temperature :
- 175°C
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 26nC @ 10V
- Input Capacitance :
- 670pF
- Drain to Source Breakdown Voltage :
- 100V
- REACH SVHC :
- Unknown
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Operating Temperature :
- -55°C~175°C TJ
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Power Dissipation :
- 3.7W
- Supplier Device Package :
- D2PAK
- Width :
- 9.65mm
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 10 ns
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Channels :
- 1
- Rds On Max :
- 160 mΩ
- Rds On (Max) @ Id, Vgs :
- 160mOhm @ 8.4A, 10V
- Datasheets
- IRF530STRLPBF
N-Channel Tape & Reel (TR) 160mOhm @ 8.4A, 10V ±20V 670pF @ 25V 26nC @ 10V 100V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
IRF530STRLPBF Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 670pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 100V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 100V.As a result of its turn-off delay time, which is 23 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 160mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 10 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 100V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
IRF530STRLPBF Features
a continuous drain current (ID) of 14A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 23 ns
single MOSFETs transistor is 160mOhm
a 100V drain to source voltage (Vdss)
IRF530STRLPBF Applications
There are a lot of Vishay Siliconix
IRF530STRLPBF applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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