IRF530NSTRRPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

Time@Peak Reflow Temperature-Max (s) :

30

Vgs(th) (Max) @ Id :

4V @ 250µA

Surface Mount :

yes

Drain Current-Max (Abs) (ID) :

17A

Operating Temperature :

-55°C~175°C TJ

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Peak Reflow Temperature (Cel) :

260

Drive Voltage (Max Rds On,Min Rds On) :

10V

Terminal Position :

Single

Packaging :

Tape and Reel (TR)

Qualification Status :

Not Qualified

JESD-30 Code :

R-PSSO-G2

Terminal Form :

Gull wing

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Input Capacitance (Ciss) (Max) @ Vds :

920pF @ 25V

Series :

HEXFET®

Power Dissipation-Max :

3.8W Ta 70W Tc

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

90m Ω @ 9A, 10V

Number of Terminations :

2

DS Breakdown Voltage-Min :

100V

Operating Mode :

ENHANCEMENT MODE

Drain to Source Voltage (Vdss) :

100V

Published :

2004

FET Type :

N-Channel

Drain-source On Resistance-Max :

0.09Ohm

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

RoHS Status :

ROHS3 Compliant

Avalanche Energy Rating (Eas) :

93 mJ

Number of Elements :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

60A

Transistor Application :

SWITCHING

ECCN Code :

EAR99

Case Connection :

DRAIN