IRF530NSTRLPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Case Connection :

DRAIN

Packaging :

Tape and Reel (TR)

Input Capacitance (Ciss) (Max) @ Vds :

920pF @ 25V

Number of Elements :

1

Turn On Delay Time :

9.2 ns

Current Rating :

17A

REACH SVHC :

No SVHC

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Rds On (Max) @ Id, Vgs :

90m Ω @ 9A, 10V

Number of Terminations :

2

Peak Reflow Temperature (Cel) :

260

Width :

9.65mm

Voltage - Rated DC :

100V

Height :

5.084mm

Factory Lead Time :

12 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drive Voltage (Max Rds On,Min Rds On) :

10V

Number of Channels :

1

Resistance :

90mOhm

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Operating Mode :

ENHANCEMENT MODE

Length :

10.668mm

Turn-Off Delay Time :

35 ns

Published :

2004

Radiation Hardening :

No

Threshold Voltage :

4V

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Termination :

SMD/SMT

Dual Supply Voltage :

100V

Fall Time (Typ) :

25 ns

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Vgs(th) (Max) @ Id :

4V @ 250µA

Series :

HEXFET®

Contact Plating :

Tin

Terminal Form :

Gull wing

Lead Free :

Contains Lead, Lead Free

Drain to Source Breakdown Voltage :

100V

Mount :

Surface Mount

Transistor Application :

SWITCHING

Rise Time :

22ns

Time@Peak Reflow Temperature-Max (s) :

30

JESD-609 Code :

e3

Vgs (Max) :

±20V

Mounting Type :

Surface Mount

Transistor Element Material :

SILICON

Power Dissipation :

3.8W

Number of Pins :

3

ECCN Code :

EAR99

JESD-30 Code :

R-PSSO-G2

Pulsed Drain Current-Max (IDM) :

60A

Continuous Drain Current (ID) :

17A

Gate to Source Voltage (Vgs) :

20V

Recovery Time :

140 ns

Nominal Vgs :

4 V

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

Max Junction Temperature (Tj) :

175°C

Power Dissipation-Max :

3.8W Ta 70W Tc