IRF530NSPBF

Manufacturer :

Infineon Technologies

Product Category :

Transistors - FETs, MOSFETs - Single

Surface Mount :

yes

Additional Feature :

AVALANCHE RATED, HIGH RELIABILITY

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Current - Continuous Drain (Id) @ 25°C :

17A Tc

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

2

Package / Case :

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Gate Charge (Qg) (Max) @ Vgs :

37nC @ 10V

Power Dissipation-Max :

3.8W Ta 70W Tc

Qualification Status :

Not Qualified

Pulsed Drain Current-Max (IDM) :

60A

Input Capacitance (Ciss) (Max) @ Vds :

920pF @ 25V

Configuration :

SINGLE WITH BUILT-IN DIODE

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

HEXFET®

Terminal Finish :

Matte Tin (Sn) - with Nickel (Ni) barrier

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

17A

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

Gull wing

Drain-source On Resistance-Max :

0.09Ohm

Mounting Type :

Surface Mount

Published :

1997

Packaging :

Tube

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

90m Ω @ 9A, 10V

ECCN Code :

EAR99

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Single

DS Breakdown Voltage-Min :

100V

FET Type :

N-Channel

Case Connection :

DRAIN

JESD-609 Code :

e3

Drain to Source Voltage (Vdss) :

100V

Operating Temperature :

-55°C~175°C TJ

Avalanche Energy Rating (Eas) :

93 mJ

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Vgs (Max) :

±20V